Unit vcbo collectorbase voltage open emitter bc635. Bc635 datasheet, bc635 pdf, bc635 pinout, equivalent, replacement silicon planar epitaxial transistors cdil, schematic, circuit, manual. Parameter symbol value unit collectorbase voltage vcbo 80 v collectoremitter voltage v ceo 80 v emitterbase voltage v ebo 5v continuous collector current ic 1a power dissipation at t amb25c ptot 800 mw. Absolute maximum ratings ta 25c unless otherwise noted. Bc639 datasheet28 pages philips npn medium power transistors. Bc637, bc639, bc63916 high current transistors npn silicon features these are pb.
Bc637 high current npn transistors on semiconductor. Bc639, bc639 npn audio general purpose transistor, buy bc639 transistor. Bc63916 switching and amplifier applications to92 1 1. Bc639, bc639 datasheet, bc639 npn audio general purpose transistor datasheet, buy bc639 transistor. Collectorbase breakdown voltage vbrcbo 100 120 v ic100a collectoremitter breakdown voltage vbrceo 80 100 v ic10ma emitter. Bc846bs 65 v, 100 ma npnnpn generalpurpose transistor. Pdf fjn3303 fjn3303 npn transistor 458 transistor c 458 tstg c 458 c transistor high voltage fastswitching npn power transistor 700v 1a to92 high voltage fastswitching npn power transistor, electronic ballast with npn transistor transistor b c 458. Bc635637639 npn epitaxial silicon transistor absolute maximum ratings ta25c unless otherwise noted pw5ms, duty cycle10% electrical characteristics ta25c unless otherwise noted symbol parameter value units vcer collectoremitter voltage at r be1k. Complementary low voltage transistor features products are preselected in dc current gain application general purpose description these epitaxial planar transistors are mounted in the sot32 plastic package. Npn medium power transistors, bc639 datasheet, bc639 circuit, bc639 data sheet. Motorola, alldatasheet, datasheet, datasheet search site for electronic components and.
H, 05jul04 specifications t a 25 c unless otherwise noted limits tp0610lt vp0610lt bs250. Zetex bc639 silicon planar medium power transistor datasheet. Bc637, bc639, bc639 16 high current transistors npn silicon features these are pb. Bc639 45 60 100 v v v vces collectoremitter voltage. High current transistors, bc639 datasheet, bc639 circuit, bc639 data sheet. Bc635 datasheet pdf pinout npn silicon epitaxial planar. Bc639 datasheet, equivalent, cross reference search. This datasheet contains the design specifications for.
Bc635 bc637 bc639 npn general purpose transistor 25dec2014 rev. Bc639 limiting values in accordance with the absolute maximum rating system iec 4. Bc639 silicon planar medium power transistor datasheet. Preliminary first production this datasheet contains preliminary data, and supplementary data will be published at a. New design please use ztx653 npn silicon planar medium power. Bc639 emitter base voltage collector current peak collector current base current collector dissipation junction temperature storage temperature v cer v ces v ceo v ebo ic icp ib p c t j t stg 45 60 100 45 60 100 45 60 80 5 1 1. Bc635 datasheet, bc635 pdf, bc635 pinout, equivalent, replacement npn silicon epitaxial planar transistor semtech, schematic, circuit, manual. Npn medium power transistor series in su rfacemounted device smd plastic packages. Bc639 vcbo 100 v bc635 45 collector to emitter voltage bc637 60 bc639 vceo 80 v emitter to base voltage vebo 5 v continuous collector current ic 1 a collector power dissipation pc 830 mw junction, storage temperature tj, tstg 150, 65150 c electrical characteristics ta 25c unless otherwise specified. Bc547 bc547a bc547b bc547c npn general purpose amplifier. This npn bipolar transistor is designed for use in industrial and consumer applications.
Bc639 datasheet, bc639 pdf, bc639 data sheet, bc639 manual, bc639 pdf, bc639. Bc635637639 bc635637639 switching and amplifier applications complement to bc636638640 npn epitaxial silicon transistor absolute maximum ratings ta25c unless otherwise noted parameter vcer collectoremitter voltage at bc635 bc637 bc639 vces collectoremitter voltage bc635 bc637 bc639 vceo. Quick reference data symbol parameter conditions min typ max unit per transistor. Description npn silicon af transistors high current gain high collector current download 5 pages. Npn general purpose amplifier bc548 bc548a bc548b bc548c this device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 ma. Npn epitaxial silicon transistor, bc639 datasheet, bc639 circuit, bc639 data sheet. Bc639 datasheet, bc639 pdf, bc639 data sheet, bc639 manual, bc639 pdf, bc639, datenblatt, electronics bc639, alldatasheet, free, datasheet, datasheets, data sheet. Sept 93 features 1 amp continuous current ptot 800 mw absolute maximum ratings. Free devices maximum ratings rating symbol value unit collector emitter voltage bc637 bc639 vceo 60 80 vdc collector base voltage bc637 bc639 vcbo 60 80 vdc emitter base voltage vebo 5. Npn silicon af transistors bc 635 datasheet catalog. Applications datasheet search, datasheets, datasheet search site for electronic components and semiconductors, integrated circuits, diodes and other semiconductors. Datasheet identification product status definition advance information formative or in design this datasheet contains the design specifications for product development. This datasheet contains preliminary data, and supplementary data will be published at a later date. Motorola smallsignal transistors, fets and diodes device data.
C2878 silicon npn epitaxial type transistor components datasheet pdf data sheet free from datasheet data sheet search for integrated circuits ic, semiconductors and other electronic components such as resistors, capacitors, transistors and diodes. Bc635637 639 npn epitaxial silicon transistor switching and amplifier applications complement to bc635638640 absolute maximum. Specifications may change in any manner without notice. Bc635637639 npn epitaxial silicon transistor solo electronica. The device is housed in the to92 package, which is designed for medium power applications. General purpose transistors npn silicon maximum ratings rating symbol value unit collectoremitter voltage pn2222 pn2222a vceo 30 40 vdc collectorbase voltage pn2222 pn2222a vcbo 60 75 vdc emitterbase voltage pn2222 pn2222a vebo 5. Product overview type number package pnppnp complement npnpnp nxp jeita complement bc846bs sot363 sc88 bc856bs bc846bpn table 2.
Bc635 datasheet pdf pinout silicon planar epitaxial. Operating and storage junction temperature range tj, tstg. Bc635 datasheet pdf npn silicon epitaxial planar transistor. Silicon planar epitaxial transistors bc635, 637, 639 npn bc636, 638, 640 pnp to92 plastic package electrical characteristics ta25. Fairchild, alldatasheet, datasheet, datasheet search site for electronic. Stmicroelectronics reveals innovative synchronousrectification controller for affordable, highefficiency power adapters mar 10, 2020 tcpp01m12, protecting usb typec against damages and serving engineers with efficiency. Bc637, bc639, bc63916 high current transistors npn silicon features these are pbfree devices.
Maximum ratings applied to the device are individual stress limit values not normal operating conditions and are not valid simultaneously. They are designed for audio amplifiers and drivers utilizing complementary or quasicomplementary circuits. Base npn epitaxial silicon transistor absolute maximum ratings ta25c unless otherwise noted symbol parameter value units vcer collectoremitter voltage at rbe1k. Philips, alldatasheet, datasheet, datasheet search site for electronic components and. To92 plasticencapsulate transistors s9018 transistor npn features z high current gain bandwidth product maximum ratings t a25. Absolute maximum ratings ta25c unless otherwise noted. Package demensions 2000 fairchild semiconductor international rev. Datasheet identification product status definition advance information preliminary no identification needed obsolete this datasheet contains the design specifications for product development. Stmicroelectronics breaks down barriers to broad adoption of vibration monitoring in industry 4. A, february 2000 bd579 dimensions in millimeters 8. The function is silicon planar epitaxial transistors. Tp0610lt, vp0610lt, bs250 vishay siliconix document number. Bc546547548549550 npn epitaxial silicon transistor. C unless specified otherwise description symbol test condition max unit dc current gain h fe v ce2v, i c5ma v ce2v, i c150ma bc635bc636 250 bc637bc638 160 bc639bc640 160 group10 160 group16 250 v ce2v.
257 653 168 1033 1009 1220 102 156 1447 120 1523 1047 693 821 1208 1581 558 45 671 1041 288 1174 276 483 47 422 284 377 832 1030 184 1253 787